Nuclear magnetic resonance field cycling investigation of iron doped indium phosphide, sulphur doped indium phosphide, and silicon doped gallium arsenide

III-V semiconductors and their alloys are by no meanssimple and have some rather subtle properties There fore their increasing commercial exploitation has stimulated phenomenal growth in the research effort devoted to studying their defects and radiation effects. NMR spectroscopy has become firmly established as one of the major methods available for structure determination and for obtaining physico-chemical information about atomic dynamics. Recent years have seen several major developments of the technique, one of which is NMR field-cycling. This work was part of a recently established and on-going NMR field-cycling research programme on semiconductors, in the physics department at the University of Surrey in Guildford, U.K. It is the first ever, series of investigations attempting a systematic study of 1 1 1 -V semiconductors using field-cycling. The Technique of field cycling is however well established for quadrupolar studies in many other materials. It is very sensitive in contrast NMR line shape techniques and shows great development potential